Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry
J.-P. Tetienne, T. Hingant, L.J. Martinez, S. Rohart, A. Thiaville, L. Herrera Diez, K. Garcia, J.-P. Adam, J.-V. Kim, J.-F. Roch, I.M. Miron, G. Gaudin, L. Vila, B. Ocker, D. Ravelosona, and V. Jacques
Excitation-dependent carrier dynamics in Al-rich AlGaN layers and multiple quantum wells
P. Ščajev, S. Miasojedovas, K. Jarašiunas, K. Hiramatsu, H. Miyake and B. Gil
Determination of carrier diffusion length in GaN
S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoc, U. Oezguer, S. Metzner, F. Bertram, J. Christen and B. Gil
Temperature dependent creation of nitrogen-vacancy centers in single crystal CVD diamond layers
A Tallaire, M Lesik, V Jacques, S Pezzagna, V Mille, O Brinza, J Meijer, B Abel, JF Roch, A Gicquel, J Achard
