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Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
B. Lefaucher, J.-B. Jager, V. Calvo, A. Durand, Y. Baron, F. Cache, V. Jacques, I. Robert-Philip, G. Cassabois,T. Herzig, J. Meijer, S. Pezzagna, M. Khoury, M. Abbarchi, A. Dréau, and J.-M. Gérard

Stability of the In-Plane Room Temperature van der Waals Ferromagnet Chromium Ditelluride and Its Conversion to Chromium-Interleaved CrTe2 Compounds
A. Purbawati, S. Sarkar, S. Pairis, M. Kostka, A. Hadj-Azzem, D. Dufeu, P. Singh, D. Bourgault, M. Nuñez-Regueiro, J. Vogel, J. Renard, L. Marty, F. Fabre, A. Finco, V. Jacques, L. Ren, V. Tiwari, C. Robert, X. Marie, N. Bendiab, N. Rougemaille, and J. Coraux

Magnetic Imaging with Spin Defects in Hexagonal Boron Nitride
P. Kumar, F. Fabre, A. Durand, T. Clua-Provost, J. Li, J.H. Edgar, N. Rougemaille, J. Coraux, X. Marie, P. Renucci, C. Robert, I. Robert-Philip, B. Gil, G. Cassabois, A. Finco, and V. Jacques

Room-temperature polarization of individual nuclear spins in diamond via anisotropic hyperfine coupling and coherent population trapping
P. Jamonneau, A. Dréau, G. Hétet, J. F. Roch, J. R. Maze and V. Jacques

Stacking-dependent deep level emission in boron nitride
A. Rousseau, P. Valvin, C. Elias, L. Xue, J. Li, J. H. Edgar, B. Gil, and G. Cassabois

Superradiance of optical phonons in two-dimensional materials
G. Cassabois, G. Fugallo, and B. Gil

Single G centers in silicon fabricated by co-implantation with carbon and proton
Y. Baron, A. Durand, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, I. Robert-Philip, M.Abbarchi, J.-M. Hartmann, S. Reboh, J.-M. Gérard, V. Jacques, G. Cassabois and A. Dréau

Decoherence of VB− spin defects in monoisotopic hexagonal boron nitride
A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivády, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois ans V. Jacques

Phonon-assisted broadening in Bernal boron nitride: A comparison between indirect and direct excitons
A. Rousseau, P. Valvin, L. Xue, J. Li, J. H. Edgar, B. Gil, and G. Cassabois

Detection of Single W-Centers in Silicon
Y. Baron, A. Durand, P. Udvarhelyi, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, I. Robert-Philip, M. Abbarchi, J.-M. Hartmann, V. Mazzocchi, J.-M. Gérard, A. Gali, V. Jacques, G. Cassabois and A. Dréau

Polytypes of sp2-Bonded Boron Nitride
B. Gil, W. Desrat, A. Rousseau, C. Elias, P. Valvin, M. Moret, J. Li, E. Janzen, J. H. Edgar and G. Cassabois

Imaging Topological Defects in a Noncollinear Antiferromagnet
A. Finco, A. Haykal, S. Fusil, P. Kumar, P. Dufour, A. Forget, D. Colson, J.-Y. Chauleau, M. Viret, N. Jaouen, V. Garcia, and V. Jacques

Low-Temperature Photophysics of Single Nitrogen-Vacancy Centers in Diamond
J. Happacher, D. A. Broadway, J. Bocquel, P. Reiser, A. Jimenéz, M. A. Tschudin, L. Thiel, D. Rohner, M. Grimau Puigibert, B. Shields, J. R. Maze, V. Jacques and P. Maletinsky

Enhancement of the creation yield of NV ensembles in a chemically vapour deposited diamond
P. Balasubramanian, C. Osterkamp, O. Brinza, M. Rollo, I. Robert-Philip, P. Goldner, V. Jacques, F. Jelezko, J. Achard and A. Tallaire

Quantitative Imaging of Exotic Antiferromagnetic Spin Cycloids in BiFeO3 Thin Films
H. Zhong, A. Finco, J. Fischer, A. Haykal, K. Bouzehouane, C. Carrétéro, F. Godel, P. Maletinsky, M. Munsch, S. Fusil, V. Jacques and V. Garcia

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
G. Cassabois, G. Fugallo, C. Elias, P. Valvin, A. Rousseau, B. Gil, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, M. Lazzeri, A. Segura, and S. V. Novikov

Porous Nitride Light-Emitting Diodes
N. Amador-Mendez, T. Mathieu-Pennober, S. Vézian, M.-P. Chauvat, M. Morales, P. Ruterana, A. Babichev, F. Bayle, F. H. Julien, S. Bouchoule, S. Collin, B. Gil, N. Tappy, A. Fontcuberta i Morral, B. Damilano and M. Tchernycheva

Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy
A. Rousseau, P. Valvin, W. Desrat, L. Xue, J. Li, J. H. Edgar, G. Cassabois and B. Gil

Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures
M. Moret, A. Rousseau, P. Valvin, S. Sharma, L. Souqui, H. Pedersen, H. Högberg, G. Cassabois, J. Li, J. H. Edgar and B. Gil

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping
J. Li, E. R. Glaser, C. Elias, G. Ye, D. Evans, L. Xue, S. Liu, G. Cassabois, B. Gil, P. Valvin, T. Pelini, A. L. Yeats, R. He, B. Liu and J. H. Edgar

Ultrafast nonlinear phonon response of few-layer hexagonal boron nitride
T. Kang, J. Zhang, A. Kundu, K. Reimann, M. Woerner, T. Elsaesser, B. Gil, G. Cassabois, C. Flytzanis, G. Fugallo, M. Lazzeri, R. Page and D. Jena

Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet
A. Rousseau, L. Ren, A. Durand, P. Valvin, B. Gil, K. Watanabe, T. Taniguchi, B. Urbaszek, X. Marie, C. Robert and G. Cassabois

Flat Bands and Giant Light-Matter Interaction in Hexagonal Boron Nitride
C. Elias, G. Fugallo, P. Valvin, C. L’Henoret, J. Li, J. H. Edgar, F. Sottile, M. Lazzeri, A. Ouerghi, B. Gil, and G. Cassabois

Band gap measurements of monolayer h-BN and insights into carbon-related point defects
R. J. P. Román, F. J. R. C. Costa, A. Zobelli, C. Elias, P. Valvin, G. Cassabois, B. Gil, A. Summerfield, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov and L. F. Zagonel