Publications

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

R. J. P. Román, F. J. R. C. Costa, A. Zobelli, C. Elias, P. Valvin, G. Cassabois, B. Gil, A. Summerfield, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov and L. F. Zagonel

2D Mater. 8, 044001 (2021)

Determination of the optical bandgap of the Bernal and rhombohedral boron nitride polymorphs

A. Rousseau, M. Moret, P. Valvin, W. Desrat, J. Li, E. Janzen, L. Xue, J. H. Edgar, G. Cassabois and B. Gil

Phys. Rev. Materials 5, 064602 (2021)

Quantitative study of the response of a single NV defect in diamond to magnetic noise

M. Rollo, A. Finco, R. Tanos, F. Fabre, T. Devolder, I. Robert-Philip, and V. Jacques

Phys. Rev. B 103, 235418 (2021)

Effect of intersystem crossing rates and optical illumination on the polarization of nuclear spins close to nitrogen-vacancy centers

H. Duarte, H. T. Dinani, V. Jacques, and J. R. Maze

Phys. Rev. B 103, 195443 (2021)

Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux

J. Li, J. Wang, X. Zhang, C. Elias, G. Ye, D. Evans, G. Eda, J. M. Redwing, G. Cassabois, B. Gil, P. Valvin, R. He, B. Liu and J. H. Edgar

ACS Nano 15, 7032 (2021)

Characterization of room-temperature in-plane magnetization in thin flakes of CrTe2 with a single-spin magnetometer

F. Fabre, A. Finco, A. Purbawati, A. Hadj-Azzem, N. Rougemaille, J. Coraux, I. Philip, and V. Jacques

Phys. Rev. Materials 5, 034008 (2021)

Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Yu. Kuznetsov, J.-M. Gérard, I. Robert-Philip, M. Abbarchi, V. Jacques, G. Cassabois, and A. Dréau

Phys. Rev. Lett. 126, 083602 (2021)

Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy

S. Boughaleb, B. Martin, C. Matei, R. Templier, L. Borowik, N. Rochat, B. Gil and A. Dussaigne

Nanotechnology 32, 195203 (2021)

Imaging non-collinear antiferromagnetic textures via single spin relaxometry

A. Finco, A. Haykal, R. Tanos, F. Fabre, S. Chouaieb, W. Akhtar, I. Robert-Philip, W. Legrand, F. Ajejas, K. Bouzehouane, N. Reyren, T. Devolder, J.-P. Adam, J. V. Kim, V. Cros and V. Jacques

Nat Commun 12, 767 (2021)

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

P. Ruterana, M. Morales, N. Chery, T. H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano and B. Gil

J. App. Phys. 128, 223102 (2020)

UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

J. Brault, M. Al Khalfioui, S. Matta, T. H.g Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil

Crystals 10, 1097 (2020)

Single artificial atoms in silicon emitting at telecom wavelengths

W. Redjem, A. Durand, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Kuznetsov, H.-S. Nguyen, S. Cueff, J.-M. Gérard, I. Robert-Philip, B. Gil, D. Caliste, P. Pochet, M. Abbarchi, V. Jacques, A. Dréau and G. Cassabois

Nat Electron 3, 738 (2020)

Temperature dependence of the longitudinal spin relaxation time T1 of single nitrogen-vacancy centers in nanodiamonds

T. de Guillebon, B. Vindolet, J.-F. Roch, V. Jacques, and L. Rondin

Phys. Rev. B 102, 165427 (2020)

Structural and electronic transitions in few layers of isotopically pure hexagonal boron nitride

J. Zribi, L. Khalil, J. Avila, J. Chaste, H. Henck, F. Oehler, B. Gil, S. Liu, J. H. Edgar, C. Giorgetti, Y. J. Dappe, E. Lhuillier, G. Cassabois, A. Ouerghi and D. Pierucci

Phys. Rev. B 102, 115141 (2020)

Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density

P. Valvin, T. Pelini, G. Cassabois, A. Zobelli, J. Li, J. H. Edgar and B. Gil

AIP Advances 10, 075025 (2020)

Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K

S. Miasojedovas, P. Scajev, K. Jarasiunas, B. Gil and H. Miyake

Phys. Rev. B 102, 035201 (2020)

Boron nitride for excitonics, nano photonics, and quantum technologies

B. Gil, G. Cassabois, R. Cusco, G. Fugallo and L. Artus

Nanophotonics 9, 3483 (2020)

Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux

vin, B. Liu and J. H. Edgar

J. Mater. Chem. C 8, 9931 (2020)

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

J. Achard, V Jacques and A Tallaire

J. Phys. D: Appl. Phys. 53 313001 (2020)

Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient

J. Li, Y. Chao, C. Elias, J. Wang, X. Zhang, G. Ye, H. Chaoran, M. Kuball. G. Eda, J. M. Redwing, R. He, G. Cassabois, B. Gil, P. Valvin, T. Pelini, B. Liu and J. H Edgar

Chem. Mater. 32, 5066 (2020)

Room-Temperature Skyrmions at Zero Field in Exchange-Biased Ultrathin Films

R. Gaurav Rana, A. Finco, F. Fabre, S. Chouaieb, A. Haykal, L. D. Buda-Prejbeanu, O. Fruchart, S. Le Denmat, P. David, M. Belmeguenai, T. Denneulin, R. E. Dunin-Borkowski, G. Gaudin, V. Jacques, and O. Boulle

Phys. Rev. Applied 13, 044079 (2020)

Antiferromagnetic textures in BiFeO3 controlled by strain and electric field

A. Haykal, J. Fischer, W. Akhtar, J.-Y. Chauleau, D. Sando, A. Finco, F. Godel, Y. A. Birkhölzer, C. Carrétéro, N. Jaouen, M. Bibes, M. Viret, S. Fusil, V. Jacques and V. Garcia

Nat. Commun. 11, 1704 (2020)

Optimal architecture for diamond-based wide-field thermal imaging

R. Tanos, W. Akhtar, S. Monneret, F. Favaro de Oliveira, M. Munsch, P. Maletinsky, L. le Gratiet, I. Sagnes, C. Gergely, V. Jacques, G. Baffou and I. Robert-Philip

AIP Advances 10, 025027 (2020)

Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet

A. A. Toropov, E. A. Evropeitsev, M. O. Nestoklon, D. S. Smirnov, T. V. Shubina, V. Kh. Kaibyshev, G. V. Budkin, V. N. Jmerik, D. V. Nechaev, S. Rouvimov, S. V. Ivanov and B. Gil

Nanoletters 20, 158 (2020)

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.-H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies and B. Gil

Journal of Applied Physics 126, 205701 (2019)

Electric and antiferromagnetic chiral textures at multiferroic domain walls

J.-Y. Chauleau, T. Chirac, S. Fusil, V. Garcia, W. Akhtar, J. Tranchida, P. Thibaudeau, I. Gross, C. Blouzon, A. Finco, M. Bibes, B. Dkhil, D.D. Khalyavin, P. Manuel, V. Jacques, N. Jaouen, and M. Viret

Nature Materials 19, 386 (2020)

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

A. Jaffal , W. Redjem, P. Regreny, H. S Nguyen, S. Cueff, X. Letartre, G. Patriarche, E. Rousseau, G. Cassabois, M. Gendry and N. Chauvin

Nanoscale 11, 21847 (2019)

Shallow and deep levels in carbon-doped hexagonal boron nitride crystals

T. Pelini, C. Elias, R. Page, L. Xue, S. Liu, J. Li, J. H. Edgar, A. Dréau, V. Jacques, P. Valvin, B. Gil, and G. Cassabois

Phys. Rev. Materials 3, 094001 (2019)

Entanglement between a Diamond Spin Qubit and a Photonic Time-Bin Qubit at Telecom Wavelength

A. Tchebotareva, S. L. N. Hermans, P. C. Humphreys, D. Voigt, P. J. Harmsma, L. K. Cheng, A. L. Verlaan, N. Dijkhuizen, W. de Jong, A. Dréau, and R. Hanson

Phys. Rev. Lett. 123, 063601 (2019)

InSe as a case between 3D and 2D layered crystals for excitons

T. Shubina, W. Desert, M. Moret, A. Tiberi, O. Briot, V. Y. Davydov, A. Platonov, M. A. Semina and B. Gil

Nature Communications 10, 3479 (2019)

Fermi level shift in carbon nanotubes by dye confinement

Y. Almadori, G. Delport, R. Chambard, L. Orcin-Chaix, A. C. Selvati, N. Izard, A. Belhboub, R. Aznar, B. Jousselme, S. Campidelli, P. Hermet, R. Le Parc, T. Saito, Y. Sato, K. Suenaga, P. Puech, J. S. Lauret, G. Cassabois, J.-L. Bantignies and L. Alvarez

Carbon 149, 772 (2019)

Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phase

A. Segura, R. Cusco, T. Taniguchi, K. Watanabe, G. Cassabois, B. Gil and L. Artus

The Journal Of Physical Chemistry C 123, 20167 (2019)

Effects of isotopic substitution on the phonons of van der Waals crystals: the case of hexagonal boron nitride

R. Cusco, J. Edgar, S. Liu, G. Cassabois, B. Gil and L. Artus

Journal Of Physics D: Applied Physics 52, 303001 (2019)

Photonics with hexagonal boron nitride

J. D. Caldwell, I. Aharonovich, G. Cassabois, J. H. Edgar, B. Gil and D. N. Basov

Nature Reviews Materials 4, 552 (2019)

Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure

K. Koronski, A. Kaminska, N. Zighadlo, C. Elias, G. Cassabois and B. Gil

Superlattices And Microstructures 131, 1 (2019)

High-Pressure Softening of the Out-of-Plane A2u(Transverse-Optic) Mode of Hexagonal Boron Nitride Induced by Dynamical Buckling

A. Segura, R. Cusco, T. Taniguchi, K. Watanabe, G. Cassabois, B. Gil and L. Artus

The Journal Of Physical Chemistry C 123, 17491 (2019)

Direct band-gap crossover in epitaxial monolayer boron nitride

C. Elias, P. Valvin, T. Pelini, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, S. V. Novikov, B. Gil and G. Cassabois

Nature Communications 10, 2639 (2019)

Optimizing synthetic diamond samples for quantum sensing technologies by tuning the growth temperature

S. Chouaieb, L.J. Martínez, W. Akhtar, I. Robert-Philip, A. Dréau, O. Brinza, J. Achard, A. Tallaire, and V. Jacques

Current-Induced Nucleation and Dynamics of Skyrmions in a Co-based Hensler Alloy

W. Akhtar, A. Hrabec, S. Chouaieb, A. Haykal, I. Gross, M. Belmeguenai, M.S. Gabor, B. Shields, P. Maletinsky, A. Thiaville, S. Rohart, and V. Jacques

Phys. Rev. Applied 11, 034066 (2019)

Influence of isotopic substitution on the anharmonicity of the interlayer shear mode of h-BN

R. Cuscó, J. H. Edgar, S. Liu, G. Cassabois, B. Gil, and L. Artús

Phys. Rev. B 99, 085428 (2019)

Enhanced excitonic emission efficiency in porous GaN

T. H. Ngo, B. Gil, T. Shubina, B. Damilano, S. Vezian, P. Valvin and J. Massies

Scientific Reports 8, 15767 (2018)

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, P. Vuong, C. Chaix, M. Al khalfioui, P. Vennegues, J. Massies and B. Gil

Journal Of Crystal Growth 499, 40 (2018)

Multiwall MoS2 tubes as optical resonators

D. R. Kazanov, A. V. Poshakinskiy, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, D. A. Kirilenko, M. Remškar, S. Fathipour, A. Mintairov, A. Seabaugh, B. Gil and T. V. Shubina

Appl. Phys. Lett. 113, 101106 (2018)

Quantum Frequency Conversion of Single Photons from a Nitrogen-Vacancy Center in Diamond to Telecommunication Wavelengths

A. Dréau, A. Tchebotareva, A. El Mahdaoui, C. Bonato, and R. Hanson

Phys. Rev. Appl. 9, 064031 (2018)

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

D. Pierucci, J. Zribi, H. Henck, J. Chaste, M. G. Silly, F. Bertran, P. Le Fevre, B. Gil, A. Summerfield, P. H. Beton, S. V. Novikov, G. Cassabois, J. E. Rault and A. Ouerghi

Appl. Phys. Lett. 112, 253102 (2018)

Publications

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