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Decoherence of VB− spin defects in monoisotopic hexagonal boron nitride
A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivády, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois ans V. Jacques
Detection of Single W-Centers in Silicon
Y. Baron, A. Durand, P. Udvarhelyi, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, I. Robert-Philip, M. Abbarchi, J.-M. Hartmann, V. Mazzocchi, J.-M. Gérard, A. Gali, V. Jacques, G. Cassabois and A. Dréau
Polytypes of sp2-Bonded Boron Nitride
B. Gil, W. Desrat, A. Rousseau, C. Elias, P. Valvin, M. Moret, J. Li, E. Janzen, J. H. Edgar and G. Cassabois
Imaging Topological Defects in a Noncollinear Antiferromagnet
A. Finco, A. Haykal, S. Fusil, P. Kumar, P. Dufour, A. Forget, D. Colson, J.-Y. Chauleau, M. Viret, N. Jaouen, V. Garcia, and V. Jacques
Low-Temperature Photophysics of Single Nitrogen-Vacancy Centers in Diamond
J. Happacher, D. A. Broadway, J. Bocquel, P. Reiser, A. Jimenéz, M. A. Tschudin, L. Thiel, D. Rohner, M. Grimau Puigibert, B. Shields, J. R. Maze, V. Jacques and P. Maletinsky
Enhancement of the creation yield of NV ensembles in a chemically vapour deposited diamond
P. Balasubramanian, C. Osterkamp, O. Brinza, M. Rollo, I. Robert-Philip, P. Goldner, V. Jacques, F. Jelezko, J. Achard and A. Tallaire
Quantitative Imaging of Exotic Antiferromagnetic Spin Cycloids in BiFeO3 Thin Films
H. Zhong, A. Finco, J. Fischer, A. Haykal, K. Bouzehouane, C. Carrétéro, F. Godel, P. Maletinsky, M. Munsch, S. Fusil, V. Jacques and V. Garcia
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
G. Cassabois, G. Fugallo, C. Elias, P. Valvin, A. Rousseau, B. Gil, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, M. Lazzeri, A. Segura, and S. V. Novikov
Porous Nitride Light-Emitting Diodes
N. Amador-Mendez, T. Mathieu-Pennober, S. Vézian, M.-P. Chauvat, M. Morales, P. Ruterana, A. Babichev, F. Bayle, F. H. Julien, S. Bouchoule, S. Collin, B. Gil, N. Tappy, A. Fontcuberta i Morral, B. Damilano and M. Tchernycheva
Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy
A. Rousseau, P. Valvin, W. Desrat, L. Xue, J. Li, J. H. Edgar, G. Cassabois and B. Gil
Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures
M. Moret, A. Rousseau, P. Valvin, S. Sharma, L. Souqui, H. Pedersen, H. Högberg, G. Cassabois, J. Li, J. H. Edgar and B. Gil
Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping
J. Li, E. R. Glaser, C. Elias, G. Ye, D. Evans, L. Xue, S. Liu, G. Cassabois, B. Gil, P. Valvin, T. Pelini, A. L. Yeats, R. He, B. Liu and J. H. Edgar
Ultrafast nonlinear phonon response of few-layer hexagonal boron nitride
T. Kang, J. Zhang, A. Kundu, K. Reimann, M. Woerner, T. Elsaesser, B. Gil, G. Cassabois, C. Flytzanis, G. Fugallo, M. Lazzeri, R. Page and D. Jena
Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet
A. Rousseau, L. Ren, A. Durand, P. Valvin, B. Gil, K. Watanabe, T. Taniguchi, B. Urbaszek, X. Marie, C. Robert and G. Cassabois
Flat Bands and Giant Light-Matter Interaction in Hexagonal Boron Nitride
C. Elias, G. Fugallo, P. Valvin, C. L’Henoret, J. Li, J. H. Edgar, F. Sottile, M. Lazzeri, A. Ouerghi, B. Gil, and G. Cassabois
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
R. J. P. Román, F. J. R. C. Costa, A. Zobelli, C. Elias, P. Valvin, G. Cassabois, B. Gil, A. Summerfield, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov and L. F. Zagonel
Determination of the optical bandgap of the Bernal and rhombohedral boron nitride polymorphs
A. Rousseau, M. Moret, P. Valvin, W. Desrat, J. Li, E. Janzen, L. Xue, J. H. Edgar, G. Cassabois and B. Gil
Quantitative study of the response of a single NV defect in diamond to magnetic noise
M. Rollo, A. Finco, R. Tanos, F. Fabre, T. Devolder, I. Robert-Philip, and V. Jacques
Effect of intersystem crossing rates and optical illumination on the polarization of nuclear spins close to nitrogen-vacancy centers
H. Duarte, H. T. Dinani, V. Jacques, and J. R. Maze
Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux
J. Li, J. Wang, X. Zhang, C. Elias, G. Ye, D. Evans, G. Eda, J. M. Redwing, G. Cassabois, B. Gil, P. Valvin, R. He, B. Liu and J. H. Edgar
Characterization of room-temperature in-plane magnetization in thin flakes of CrTe2 with a single-spin magnetometer
F. Fabre, A. Finco, A. Purbawati, A. Hadj-Azzem, N. Rougemaille, J. Coraux, I. Philip, and V. Jacques
Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon
A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Yu. Kuznetsov, J.-M. Gérard, I. Robert-Philip, M. Abbarchi, V. Jacques, G. Cassabois, and A. Dréau
Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy
S. Boughaleb, B. Martin, C. Matei, R. Templier, L. Borowik, N. Rochat, B. Gil and A. Dussaigne
Imaging non-collinear antiferromagnetic textures via single spin relaxometry
A. Finco, A. Haykal, R. Tanos, F. Fabre, S. Chouaieb, W. Akhtar, I. Robert-Philip, W. Legrand, F. Ajejas, K. Bouzehouane, N. Reyren, T. Devolder, J.-P. Adam, J. V. Kim, V. Cros and V. Jacques
Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
P. Ruterana, M. Morales, N. Chery, T. H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano and B. Gil
UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots
J. Brault, M. Al Khalfioui, S. Matta, T. H.g Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Kuznetsov, H.-S. Nguyen, S. Cueff, J.-M. Gérard, I. Robert-Philip, B. Gil, D. Caliste, P. Pochet, M. Abbarchi, V. Jacques, A. Dréau and G. Cassabois
Temperature dependence of the longitudinal spin relaxation time T1 of single nitrogen-vacancy centers in nanodiamonds
T. de Guillebon, B. Vindolet, J.-F. Roch, V. Jacques, and L. Rondin
Structural and electronic transitions in few layers of isotopically pure hexagonal boron nitride
J. Zribi, L. Khalil, J. Avila, J. Chaste, H. Henck, F. Oehler, B. Gil, S. Liu, J. H. Edgar, C. Giorgetti, Y. J. Dappe, E. Lhuillier, G. Cassabois, A. Ouerghi and D. Pierucci
Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density
P. Valvin, T. Pelini, G. Cassabois, A. Zobelli, J. Li, J. H. Edgar and B. Gil
Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K
S. Miasojedovas, P. Scajev, K. Jarasiunas, B. Gil and H. Miyake
Boron nitride for excitonics, nano photonics, and quantum technologies
B. Gil, G. Cassabois, R. Cusco, G. Fugallo and L. Artus
Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux
vin, B. Liu and J. H. Edgar
Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient
J. Li, Y. Chao, C. Elias, J. Wang, X. Zhang, G. Ye, H. Chaoran, M. Kuball. G. Eda, J. M. Redwing, R. He, G. Cassabois, B. Gil, P. Valvin, T. Pelini, B. Liu and J. H Edgar
Room-Temperature Skyrmions at Zero Field in Exchange-Biased Ultrathin Films
R. Gaurav Rana, A. Finco, F. Fabre, S. Chouaieb, A. Haykal, L. D. Buda-Prejbeanu, O. Fruchart, S. Le Denmat, P. David, M. Belmeguenai, T. Denneulin, R. E. Dunin-Borkowski, G. Gaudin, V. Jacques, and O. Boulle
Antiferromagnetic textures in BiFeO3 controlled by strain and electric field
A. Haykal, J. Fischer, W. Akhtar, J.-Y. Chauleau, D. Sando, A. Finco, F. Godel, Y. A. Birkhölzer, C. Carrétéro, N. Jaouen, M. Bibes, M. Viret, S. Fusil, V. Jacques and V. Garcia
Optimal architecture for diamond-based wide-field thermal imaging
R. Tanos, W. Akhtar, S. Monneret, F. Favaro de Oliveira, M. Munsch, P. Maletinsky, L. le Gratiet, I. Sagnes, C. Gergely, V. Jacques, G. Baffou and I. Robert-Philip
Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet
A. A. Toropov, E. A. Evropeitsev, M. O. Nestoklon, D. S. Smirnov, T. V. Shubina, V. Kh. Kaibyshev, G. V. Budkin, V. N. Jmerik, D. V. Nechaev, S. Rouvimov, S. V. Ivanov and B. Gil
Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
J. Brault, S. Matta, T.-H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies and B. Gil
Electric and antiferromagnetic chiral textures at multiferroic domain walls
J.-Y. Chauleau, T. Chirac, S. Fusil, V. Garcia, W. Akhtar, J. Tranchida, P. Thibaudeau, I. Gross, C. Blouzon, A. Finco, M. Bibes, B. Dkhil, D.D. Khalyavin, P. Manuel, V. Jacques, N. Jaouen, and M. Viret
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
A. Jaffal , W. Redjem, P. Regreny, H. S Nguyen, S. Cueff, X. Letartre, G. Patriarche, E. Rousseau, G. Cassabois, M. Gendry and N. Chauvin
Shallow and deep levels in carbon-doped hexagonal boron nitride crystals
T. Pelini, C. Elias, R. Page, L. Xue, S. Liu, J. Li, J. H. Edgar, A. Dréau, V. Jacques, P. Valvin, B. Gil, and G. Cassabois
Entanglement between a Diamond Spin Qubit and a Photonic Time-Bin Qubit at Telecom Wavelength
A. Tchebotareva, S. L. N. Hermans, P. C. Humphreys, D. Voigt, P. J. Harmsma, L. K. Cheng, A. L. Verlaan, N. Dijkhuizen, W. de Jong, A. Dréau, and R. Hanson
InSe as a case between 3D and 2D layered crystals for excitons
T. Shubina, W. Desert, M. Moret, A. Tiberi, O. Briot, V. Y. Davydov, A. Platonov, M. A. Semina and B. Gil
Fermi level shift in carbon nanotubes by dye confinement
Y. Almadori, G. Delport, R. Chambard, L. Orcin-Chaix, A. C. Selvati, N. Izard, A. Belhboub, R. Aznar, B. Jousselme, S. Campidelli, P. Hermet, R. Le Parc, T. Saito, Y. Sato, K. Suenaga, P. Puech, J. S. Lauret, G. Cassabois, J.-L. Bantignies and L. Alvarez
Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phase
A. Segura, R. Cusco, T. Taniguchi, K. Watanabe, G. Cassabois, B. Gil and L. Artus
Effects of isotopic substitution on the phonons of van der Waals crystals: the case of hexagonal boron nitride
R. Cusco, J. Edgar, S. Liu, G. Cassabois, B. Gil and L. Artus
Photonics with hexagonal boron nitride
J. D. Caldwell, I. Aharonovich, G. Cassabois, J. H. Edgar, B. Gil and D. N. Basov
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
K. Koronski, A. Kaminska, N. Zighadlo, C. Elias, G. Cassabois and B. Gil
