Publication Year: 2016

Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, S. Matta, T. H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendile, S. Chenot, P. De Miery, J. Massies and B. Gil 

Materials Science In Semiconductor Processing 55, 95 (2016)

Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN

R. Cuscó, B. Gil, G. Cassabois, and L. Artús

Phys. Rev. B 94, 155435 (2016)

External control of dissipative coupling in heterogeneously integrated photonic crystal SOI waveguide optomechanical system conditions

V. Tsvirkun, A. Surrente, F. Raineri, G. Beaudoin, R. Raj, I. SAgnes, I. Robert-Philip and R. Braive

Photonics 3, 52 (2016)

Efficient single photon emission from a high-purity hexagonal boron nitride crystal

L. J. Martínez, T. Pelini, V. Waselowski, J. R. Maze, B. Gil, G. Cassabois, and V. Jacques

Phys. Rev. B 94, 121405(R) (2016)

Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride

T. Q. P. Vuong, G. Cassabois, P. Valvin, A. Ouerghi, Y. Chassagneux, C. Voisin, and B. Gil

Phys. Rev. Lett. 117, 097402 (2016)

Direct measurement of interfacial Dzyaloshinskii-Moriya interaction in X/CoFeB/MgO heterostructures with a scanning-NV magnetometer

I. Gross, L. J. Martínez, J.-P. Tetienne, T. Hingant, J.-F. Roch, K. Garcia, R. Soucaille, J. P. Adam, J.-V. Kim, S. Rohart, A. Thiaville, J. Torrejon, M. Hayashi, and V. Jacques

Phys. Rev. B 94, 064413 (2016)

Towards a spin-ensemble quantum memory for superconducting qubits

C. Grezes, Y. Kubo, B. Julsgaard, T. Umeda, J. Isoya, H. Sumiya, H. Abe, S. Onoda, T. Ohshima, K. Nakamura, I. Diniz, A. Auffèves, V. Jacques, J.-F. Roch, D. Vion, D. Esteve, K. Moelmer, and P. Bertet

C. R. Physique 17, 693-704 (2016)

Production of bulk NV centre arrays by shallow implantation and diamond CVD overgrowth

M. Lesik, N. Raatz, A. Tallaire, P. Spinicelli, R. John, J. Achard, A. Gicquel, V. Jacques, J.-F. Roch, J. Meijer, and S. Pezzagna

Phys. Status Solidi A, 1-7 (2016)

Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. De Mierry

Japanese Journal Of Applied Physics 55, 05FG10 (2016)

Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

 J. Brault, S. Matta, T. H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennegues, M. Al khalfioui, A. Courville, O.  Tottereau, J. Massies and B. Gil 

Japanese Journal Of Applied Physics 55, 05FG06 (2016)