Enhanced excitonic emission efficiency in porous GaN
T. H. Ngo, B. Gil, T. Shubina, B. Damilano, S. Vezian, P. Valvin and J. Massies
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
S. Matta, J. Brault, M. Korytov, P. Vuong, C. Chaix, M. Al khalfioui, P. Vennegues, J. Massies and B. Gil
Multiwall MoS2 tubes as optical resonators
D. R. Kazanov, A. V. Poshakinskiy, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, D. A. Kirilenko, M. Remškar, S. Fathipour, A. Mintairov, A. Seabaugh, B. Gil and T. V. Shubina
Quantum Frequency Conversion of Single Photons from a Nitrogen-Vacancy Center in Diamond to Telecommunication Wavelengths
A. Dréau, A. Tchebotareva, A. El Mahdaoui, C. Bonato, and R. Hanson
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
D. Pierucci, J. Zribi, H. Henck, J. Chaste, M. G. Silly, F. Bertran, P. Le Fevre, B. Gil, A. Summerfield, P. H. Beton, S. V. Novikov, G. Cassabois, J. E. Rault and A. Ouerghi
UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range
J. Brault, M. Al khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J. Nkek, P. Vennegues, J.-Y. Duboz, J. Massies and B. Gil
Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitride
R. Cuscó, L. Artús, J. H. Edgar, S. Liu, G. Cassabois, and B. Gil
Superconducting Ga/GaSe layers grown by van der Waals epitaxy
W. Desrat, M. Moret, O. Briot, T. H. Ngo, B. Jabakhanji, B. Piot and B. Gil
Delayed formation of coherence in the emission dynamics of high-Q nanolasers
G. Moody, M. Segnon, I. Sagnes, R. Braive, A. Beveratos, I. Robert-Philip, N. Belabas, F. Jahnke, K. L. Silverman, R. P. Mirin, M. J. Stevens and C. Gies
Coherent Population Trapping with a controlled dissipation: applications in optical metrology
L. Nicolas, T. Delord, P. Jamonneau, R. Coto, J. Maze, V. Jacques, and G. Hétet
