Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
P. Ruterana, M. Morales, N. Chery, T. H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano and B. Gil
UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots
J. Brault, M. Al Khalfioui, S. Matta, T. H.g Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Kuznetsov, H.-S. Nguyen, S. Cueff, J.-M. Gérard, I. Robert-Philip, B. Gil, D. Caliste, P. Pochet, M. Abbarchi, V. Jacques, A. Dréau and G. Cassabois
Temperature dependence of the longitudinal spin relaxation time T1 of single nitrogen-vacancy centers in nanodiamonds
T. de Guillebon, B. Vindolet, J.-F. Roch, V. Jacques, and L. Rondin
Structural and electronic transitions in few layers of isotopically pure hexagonal boron nitride
J. Zribi, L. Khalil, J. Avila, J. Chaste, H. Henck, F. Oehler, B. Gil, S. Liu, J. H. Edgar, C. Giorgetti, Y. J. Dappe, E. Lhuillier, G. Cassabois, A. Ouerghi and D. Pierucci
Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density
P. Valvin, T. Pelini, G. Cassabois, A. Zobelli, J. Li, J. H. Edgar and B. Gil
Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K
S. Miasojedovas, P. Scajev, K. Jarasiunas, B. Gil and H. Miyake
Boron nitride for excitonics, nano photonics, and quantum technologies
B. Gil, G. Cassabois, R. Cusco, G. Fugallo and L. Artus
Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux
vin, B. Liu and J. H. Edgar
Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications
J. Achard, V Jacques and A Tallaire
