Publication Year: 2022

Magnetic Imaging with Spin Defects in Hexagonal Boron Nitride

P. Kumar, F. Fabre, A. Durand, T. Clua-Provost, J. Li, J.H. Edgar, N. Rougemaille, J. Coraux, X. Marie, P. Renucci, C. Robert, I. Robert-Philip, B. Gil, G. Cassabois, A. Finco, and V. Jacques

Phys. Rev. Applied 18, L061002 (2022)

Room-temperature polarization of individual nuclear spins in diamond via anisotropic hyperfine coupling and coherent population trapping

P. Jamonneau, A. Dréau, G. Hétet, J. F. Roch, J. R. Maze and V. Jacques

The European Physical Journal D 76, 228 (2022)

Preparation of Confined One-Dimensional Boron Nitride Chains in the 1-D Pores of Siliceous Zeolites under High-Pressure, High-Temperature Conditions

D. Paliwoda, M. Fabbiani, M. Wynn, F. Alabarse, A. Rosenthal, W. Crichton, L. Konczewicz, M. Bockowski, D. Maurin, T. Michel, U. B. Demirci, J. Rouquette, P. Hermet, F. di Renzo, A. van der Lee, G. Cassabois, S. Bernard and J. Haines

Inorg. Chem. 61, 18059 (2022)

Stacking-dependent deep level emission in boron nitride

A. Rousseau, P. Valvin, C. Elias, L. Xue, J. Li, J. H. Edgar, B. Gil, and G. Cassabois

Phys. Rev. Materials 6, 094009 (2022)

Superradiance of optical phonons in two-dimensional materials

G. Cassabois, G. Fugallo, and B. Gil

Phys. Rev. Research 4, L032040 (2022)

Single G centers in silicon fabricated by co-implantation with carbon and proton

Y. Baron, A. Durand, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, I. Robert-Philip, M.Abbarchi, J.-M. Hartmann, S. Reboh, J.-M. Gérard, V. Jacques, G. Cassabois and A. Dréau

Appl. Phys. Lett. 121, 084003 (2022)

Decoherence of VB− spin defects in monoisotopic hexagonal boron nitride

A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivády, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois ans V. Jacques

Nat. Comm. 13, 4347 (2022)

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin and B. Gil

J. Appl. Phys. 132, 035302 (2022)

Phonon-assisted broadening in Bernal boron nitride: A comparison between indirect and direct excitons

A. Rousseau, P. Valvin, L. Xue, J. Li, J. H. Edgar, B. Gil, and G. Cassabois

Phys. Rev. B 106, 035203 (2022)

Detection of Single W-Centers in Silicon

Y. Baron, A. Durand, P. Udvarhelyi, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, I. Robert-Philip, M. Abbarchi, J.-M. Hartmann, V. Mazzocchi, J.-M. Gérard, A. Gali, V. Jacques, G. Cassabois and A. Dréau

ACS Photonics 9, 2337 (2022)