Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization
A. Ibanez, W. Desrat, G. Cassabois, J.Brault, and B. Gil
Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride
J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, and G. Cassabois
Growth of hexagonal BN crystals by traveling-solvent floating zone
E. Zoghlin, J. Plo, G. Ye, C. Nnokwe, R. Gomez, A. Ferrenti, S. Kushwaha, R. He, S. D. Wilson, P. Valvin, B. Gil, G. Cassabois, J. H. Edgar, and T. M. McQueen
Charge State Tuning of Spin Defects in Hexagonal Boron Nitride
J. Fraunié, T. Clua-Provost, S. Roux, Z. Mu, A. Delpoux, G. Seine, D. Lagarde, K. Watanabe, T. Taniguchi, X. Marie, T. Poirier, J. H. Edgar, J. Grisolia, B. Lassagne, A. Claverie, V. Jacques, and C. Robert
Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate
S. Moon, O. F. N. Okello, A. Rousseau, C.-W. Choi, Y. Kim, Y. Park, J. Kim, J. Kim, M. Kim, P. Valvin, J. Cho, K. Watanabe, T. Taniguchi, H. Y. Jeong, G. Fugallo, W. Desrat, F. Ding, J.D. Lee, B. Gil, G. Cassabois, S.-Y. Choi, and J. K. Kim
Layer-by-Layer Connection for Large Area Single Crystal Boron Nitride Multilayer Films
H. Shi, M. Wang, H. Chen, A. Rousseau, J. Shu, M. Tian, R. Chen, J. Plo, P. Valvin, B. Gil, J. Qi, Q. Wang, K. Liu, M. Zhang, G. Cassabois, D. Wu, and N. Wan
Laser patterning of the room temperature van der Waals ferromagnet 1𝑇−CrTe2
T. Riccardi, S. Sarkar, A. Purbawati, A. Arrighi, M. Kostka, A. Hadj-Azzem, J. Vogel, J. Renard, L. Marty, A. Pawbake, C. Faugeras, K. Watanabe, T. Taniguchi, A. Finco, V. Jacques, L. Ren, X. Marie, C. Robert, M. Nuñez-Regueiro, N. Rougemaille, N. Bendiab, and J. Coraux
