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Publication Year: 2025

Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite

F. J. R. Costa, D. Arribas, T. G. L. Brito, T. S. Cheng, J. Bradford, A. Thompson, A. Saywell, C. J. Mellor, P. H. Beton, S. V. Novikov, J. Plo, B. Gil, G. Cassabois, L. F. Zagonel, K. Kuhnke, K. Kern, and A. Rosławska

ACS Nano 19, 35528 (2025)

Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure

Z. Mu, J. Fraunié, A. Durand, S. Clément, A. Finco, J. Rouquette, A. Hadj-Azzem, N. Rougemaille, J. Coraux, J. Li, T. Poirier, J. H. Edgar, I. C. Gerber, X. Marie, B. Gil, G. Cassabois, C. Robert and V. Jacques

Nature Communications 16, 8574 (2025)

Thermal spin wave noise as a probe for the Dzyaloshinkii-Moriya interaction

A. Finco, P. Kumar, V. T. Pham, J. Urrestarazu-Larrañaga, R. G. Garcia, M. Rollo, O. Boulle, J.-V. Kim and V. Jacques

Phys. Rev. Lett. 135, 136703 (2025)

Intralayer Carrier Diffusion and Exciton-Exciton Annihilation in Hexagonal Boron Nitride Investigated by Two-Color Pump-Probe Experiments

P. Scajev, S. Miasojedovas, G. Cassabois, J. Li, J. H. Edgar, and B. Gil

Advanced Optical Materials 13, e01337 (2025)

Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization

A. Ibanez, W. Desrat, G. Cassabois, J.Brault, and B. Gil

physica status solidi (a), 2500284 (2025)

Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride

J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, and G. Cassabois

Phys. Rev. X 15, 021045 (2025)

Growth of hexagonal BN crystals by traveling-solvent floating zone

E. Zoghlin, J. Plo, G. Ye, C. Nnokwe, R. Gomez, A. Ferrenti, S. Kushwaha, R. He, S. D. Wilson, P. Valvin, B. Gil, G. Cassabois, J. H. Edgar, and T. M. McQueen

J. Crystal Growth 661, 128164 (2025)

Charge State Tuning of Spin Defects in Hexagonal Boron Nitride

J. Fraunié, T. Clua-Provost, S. Roux, Z. Mu, A. Delpoux, G. Seine, D. Lagarde, K. Watanabe, T. Taniguchi, X. Marie, T. Poirier, J. H. Edgar, J. Grisolia, B. Lassagne, A. Claverie, V. Jacques, and C. Robert

Nano Lett. 25, 5836 (2025)

Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate

S. Moon, O. F. N. Okello, A. Rousseau, C.-W. Choi, Y. Kim, Y. Park, J. Kim, J. Kim, M. Kim, P. Valvin, J. Cho, K. Watanabe, T. Taniguchi, H. Y. Jeong, G. Fugallo, W. Desrat, F. Ding, J.D. Lee, B. Gil, G. Cassabois, S.-Y. Choi, and J. K. Kim

Nat. Mater. 24, 843–851 (2025)

Layer-by-Layer Connection for Large Area Single Crystal Boron Nitride Multilayer Films

H. Shi, M. Wang, H. Chen, A. Rousseau, J. Shu, M. Tian, R. Chen, J. Plo, P. Valvin, B. Gil, J. Qi, Q. Wang, K. Liu, M. Zhang, G. Cassabois, D. Wu, and N. Wan

ACS Appl. Mater. Interfaces 17, 14660 (2025)

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