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Extrinsic and intrinsic nonradiative recombination channels in deep ultraviolet (λ < 230 nm) light emitting heterostructures made of group III element nitrides
A. Ibanez, P. Ščajev, M. A. Khan, K. Fujimoto, S. Mitra, P. Valvin, G. Cassabois, M. Leroux, J. Brault, H. Hirayama and B. Gil

Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors
Z.Mu, Z. Zhang, J. Fraunié, C. Robert, G. Seine, B. Gil, G.Cassabois and V. Jacques

Isofrequency spin-wave imaging using color center magnetometry for magnon spintronics
S. Mañas-Valero, Y. C. Doedes, A. Bondarenko, M. Borst, S. Kurdi, T. Poirier, J. H. Edgar, V. Jacques, Y. M. Blanter and T. van der Sar

Growth of rhombohedral boron nitride crystals using an iron flux
W. Desrat, M. Moret, J. Plo, T. Michel, A. Ibanez, P. Valvin, V. Jacques, I. Philip-Robert, G. Cassabois and B. Gil

Room temperature magnetic vortices in the van der Waals magnet Fe5GeTe2
E. Sfeir, C. Schrader, F. Fabre, J. Courtin, C. Vergnaud, A. Marty, M. Jamet, F. Bonell, I. Robert-Philip, V. Jacques and A. Finco

Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy
J. Bradford, A. F. M. Collins, T. S. Cheng, J. Shen, J. Kerfoot, G. A. Rance, J. Li, C. J. Mellor, P. H. Beton, G. Cassabois, S. Dai, J. H. Edgar and S. V. Novikov

Nanoscale Band Gap Modulation and Dual Moiré Superlattices of Hexagonal Boron Nitride Weakly Coupled to Graphite
F. J. R. Costa, D. Arribas, T. G. L. Brito, T. S. Cheng, J. Bradford, A. Thompson, A. Saywell, C. J. Mellor, P. H. Beton, S. V. Novikov, J. Plo, B. Gil, G. Cassabois, L. F. Zagonel, K. Kuhnke, K. Kern, and A. Rosławska

Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure
Z. Mu, J. Fraunié, A. Durand, S. Clément, A. Finco, J. Rouquette, A. Hadj-Azzem, N. Rougemaille, J. Coraux, J. Li, T. Poirier, J. H. Edgar, I. C. Gerber, X. Marie, B. Gil, G. Cassabois, C. Robert and V. Jacques

Thermal spin wave noise as a probe for the Dzyaloshinkii-Moriya interaction
A. Finco, P. Kumar, V. T. Pham, J. Urrestarazu-Larrañaga, R. G. Garcia, M. Rollo, O. Boulle, J.-V. Kim and V. Jacques

Intralayer Carrier Diffusion and Exciton-Exciton Annihilation in Hexagonal Boron Nitride Investigated by Two-Color Pump-Probe Experiments
P. Scajev, S. Miasojedovas, G. Cassabois, J. Li, J. H. Edgar, and B. Gil

Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization
A. Ibanez, W. Desrat, G. Cassabois, J.Brault, and B. Gil

Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride
J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, and G. Cassabois

Growth of hexagonal BN crystals by traveling-solvent floating zone
E. Zoghlin, J. Plo, G. Ye, C. Nnokwe, R. Gomez, A. Ferrenti, S. Kushwaha, R. He, S. D. Wilson, P. Valvin, B. Gil, G. Cassabois, J. H. Edgar, and T. M. McQueen

Charge State Tuning of Spin Defects in Hexagonal Boron Nitride
J. Fraunié, T. Clua-Provost, S. Roux, Z. Mu, A. Delpoux, G. Seine, D. Lagarde, K. Watanabe, T. Taniguchi, X. Marie, T. Poirier, J. H. Edgar, J. Grisolia, B. Lassagne, A. Claverie, V. Jacques, and C. Robert

Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate
S. Moon, O. F. N. Okello, A. Rousseau, C.-W. Choi, Y. Kim, Y. Park, J. Kim, J. Kim, M. Kim, P. Valvin, J. Cho, K. Watanabe, T. Taniguchi, H. Y. Jeong, G. Fugallo, W. Desrat, F. Ding, J.D. Lee, B. Gil, G. Cassabois, S.-Y. Choi, and J. K. Kim

Layer-by-Layer Connection for Large Area Single Crystal Boron Nitride Multilayer Films
H. Shi, M. Wang, H. Chen, A. Rousseau, J. Shu, M. Tian, R. Chen, J. Plo, P. Valvin, B. Gil, J. Qi, Q. Wang, K. Liu, M. Zhang, G. Cassabois, D. Wu, and N. Wan

Laser patterning of the room temperature van der Waals ferromagnet 1𝑇−CrTe2
T. Riccardi, S. Sarkar, A. Purbawati, A. Arrighi, M. Kostka, A. Hadj-Azzem, J. Vogel, J. Renard, L. Marty, A. Pawbake, C. Faugeras, K. Watanabe, T. Taniguchi, A. Finco, V. Jacques, L. Ren, X. Marie, C. Robert, M. Nuñez-Regueiro, N. Rougemaille, N. Bendiab, and J. Coraux

Hopping of the Center-of-Mass of Single G Centers in Silicon-on-Insulator
A. Durand, Y. Baron, P. Udvarhelyi, F. Cache, K. Velliyur Ramachandran, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, J.-M. Hartmann, S. Reboh, M. Abbarchi, I. Robert-Philip, A. Gali, J.-M. Gérard, V. Jacques, G. Cassabois, and A. Dréau

Impact of Thickness-Dependent Nanophotonic Effects on the Optical Response of Color Centers in Hexagonal Boron Nitride
T. Clua-Provost, A. Durand, J. Fraunié, C. Robert, X. Marie, J. Li, J. H. Edgar, B. Gil, J.-M. Gérard, G. Cassabois, and V. Jacques

Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
T. Clua-Provost, Z. Mu, A. Durand, C. Schrader, J. Happacher, J. Bocquel, P. Maletinsky, J. Fraunié, X. Marie, C. Robert, G. Seine, E. Janzen, J. H. Edgar, B. Gil, G. Cassabois, and V. Jacques

Genuine and faux single G centers in carbon-implanted silicon
A. Durand, Y. Baron, F. Cache, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, J.-M. Hartmann, S. Reboh, M. Abbarchi, I. Robert-Philip, J.-M. Gérard, V. Jacques, G. Cassabois, and A. Dréau

Interplay between anisotropic strain, ferroelectric, and antiferromagnetic textures in highly compressed BiFeO3 epitaxial thin films
A. Abdelsamie, A. Chaudron, K. Bouzehouane, P. Dufour, A. Finco, C. Carrétéro, V. Jacques, S. Fusil and V. Garcia

Homoepitaxy of Boron Nitride on exfoliated Hexagonal Boron Nitride flakes
J. Binder, A. K. Dabrowska, M. Tokarczyk, A. Rousseau, P. Valvin, R. Bozek, K. Nogajewski, G. Kowalski, W. Pacuski, B. Gil, G. Cassabois, R. Stepniewski, and A. Wysmolek

The influence of alloy disorder effects on the anisotropy of emission diagrams in (Al,Ga)N quantum wells embedded into AlN barriers
A. Ibanez, M. Leroux, N. Nikitskiy, W. Desrat, M. Moret, P. Valvin, G. Cassabois, J. Brault, B. Gil, F. Chugenji, K. Taiga, M. A. Khan, and H. Hirayama