Point defects in semiconductor materials
contacts:
Anaïs DREAU, Vincent JACQUES & Guillaume CASSABOIS
Atomic-like systems in solids are at the heart of a broad range of emerging quantum applications, from quantum information science to highly sensitive quantum sensing. One prominent platform in this context is based on point defects in wide bandgap materials. Such defects may encompass charge, orbital and spin degrees of freedom. In particular, their spin degree of freedom may be optically accessible and controllable, while featuring record coherence times in the solid-state even at room temperature. These spin qubits have already enabled the implementation of elaborate quantum protocols and quantum probes.
Our research scope focuses on the physics of such point defects and associated spins in various semiconductor materials including diamond, hBN, with a particular focus on Silicon, offering expanded range of functionalities for quantum technologies.
Defects in hBN
Single defect in silicon
SOME RECENT PUBLICATIONS
Genuine and faux single G centers in carbon-implanted silicon
A. Durand, Y. Baron, F. Cache, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, J.-M. Hartmann, S. Reboh, M. Abbarchi, I. Robert-Philip, J.-M. Gérard, V. Jacques, G. Cassabois, and A. Dréau
Purcell Enhancement of Silicon W Centers in Circular Bragg Grating Cavities
B. Lefaucher, J.-B. Jager, V. Calvo, F. Cache, A. Durand, V. Jacques I. Robert-Philip, G. Cassabois, Y. Baron, F. Mazen, S. Kerdilès, S. Reboh, A. Dréau, and J.-M. Gérard
Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
A. Durand, T. Clua-Provost, F. Fabre, P. Kumar, J. Li, J. H. Edgar, P. Udvarhelyi, A. Gali, X. Marie, C. Robert, J. M. Gérard, B. Gil, G. Cassabois, and V. Jacques
Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride
T. Clua-Provost, A. Durand, Z. Mu, T. Rastoin, J. Fraunié, E. Janzen, H. Schutte, J. H. Edgar, G. Seine, A. Claverie, X. Marie, C. Robert, B. Gil, G. Cassabois, and V. Jacques
Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
B. Lefaucher, J.-B. Jager, V. Calvo, A. Durand, Y. Baron, F. Cache, V. Jacques, I. Robert-Philip, G. Cassabois, T. Herzig, J. Meijer, S. Pezzagna, M. Khoury, M. Abbarchi, A. Dréau, and J.-M. Gérard
Single G centers in silicon fabricated by co-implantation with carbon and proton
Y. Baron, A. Durand, T. Herzig, M. Khoury, S. Pezzagna, J. Meijer, I. Robert-Philip, M.Abbarchi, J.-M. Hartmann, S. Reboh, J.-M. Gérard, V. Jacques, G. Cassabois and A. Dréau
Decoherence of VB− spin defects in monoisotopic hexagonal boron nitride
A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivády, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois ans V. Jacques
Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon
A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Yu. Kuznetsov, J.-M. Gérard, I. Robert-Philip, M. Abbarchi, V. Jacques, G. Cassabois, and A. Dréau
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Kuznetsov, H.-S. Nguyen, S. Cueff, J.-M. Gérard, I. Robert-Philip, B. Gil, D. Caliste, P. Pochet, M. Abbarchi, V. Jacques, A. Dréau and G. Cassabois
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