Research

Our research group explores and builds on quantum effects at the nanoscale occurring in individual solid-state impurities. Our activity is developed along four lines.

Single color centers in silicon

We investigate the photon and spin quantum properties of individual optically active point defects in silicon, combining the best attributes of atomic and of condensed matter systems for fiber-based quantum communications and quantum integrated photonics.

Quantum sensing with spin defects in 2D materials

We explore the properties of spin defects in hexagonal boron nitride (hBN), which are promising candidates for the development of flexible 2D quantum sensors, enabling atomic-scale probing of phase transitions in 2D materials under extreme conditions.

Nanoscale imaging with NV centers in diamond

We exploit single spins isolated in diamond for the development and use of versatile quantum imagers  enabling on a single platform to map the magnetic field, magnetic noise and electric field at nanoscale and with a high sensitivity.

Ultrawide-bandgap semiconductors for deep-UV optoelectronics

We explore the physics of ultrawide-bandgap semiconductors for applications in deep-ultraviolet optoelectronics. Our activities are currently focused on hexagonal boron nitride, a 2D material with outstanding properties for deep-ultraviolet devices.